TY - JOUR IS - 4 Y1 - 2024/12// PB - American Institute of Physics A1 - Chen, Yue A1 - Zhang, Weijian A1 - Lu, Yuezhen A1 - Chen, Minzhen A1 - Chen, Jing A1 - Lu, Hongyi A1 - Niu, Yubiao A1 - Zhao, Guiying A1 - Tao, Jianming A1 - Li, Jiaxin A1 - Lin, Yingbin A1 - Kolosov, Oleg A1 - Huang, Zhigao UR - https://doi.org/10.1063/5.0200811 KW - FILMS KW - Physical Sciences KW - Physics KW - Physics KW - Applied KW - Science & Technology TI - Inhibiting the current spikes within the channel layer of LiCoO2-based three-terminal synaptic transistors N2 - Synaptic transistors, which emulate the behavior of biological synapses, play a vital role in information processing and storage in neuromorphic systems. However, the occurrence of excessive current spikes during the updating of synaptic weight poses challenges to the stability, accuracy, and power consumption of synaptic transistors. In this work, we experimentally investigate the main factors for the generation of current spikes in the three-terminal synaptic transistors that use LiCoO2 (LCO), a mixed ionic-electronic conductor, as the channel layer. Kelvin probe force microscopy and impedance testing results reveal that ion migration and adsorption at the drain-source-channel interface cause the current spikes that compromise the device's performance. By controlling the crystal orientation of the LCO channel layer to impede the in-plane migration of lithium ions, we show that the LCO channel layer with the (104) preferred orientation can effectively suppress both the peak current and power consumption in the synaptic transistors. Our study provides a unique insight into controlling the crystallographic orientation for the design of high-speed, high-robustness, and low-power consumption nano-memristor devices. VL - 11 SN - 1931-9401 N1 - This version is the version of record. For information on re-use, please refer to the publisher?s terms and conditions. ID - discovery10199331 AV - restricted JF - Applied Physics Reviews EP - 9 ER -