TY  - JOUR
KW  - Electrical and electronic engineering
KW  -  Electronic devices
JF  - Nature Reviews Materials
PB  - Springer Science and Business Media LLC
A1  - Padovani, A
A1  - La Torraca, P
A1  - Strand, J
A1  - Larcher, L
A1  - Shluger, AL
SP  - 607
N1  - This version is the author accepted manuscript. For information on re-use, please refer to the publisher's terms and conditions.
VL  - 9
ID  - discovery10196865
UR  - http://dx.doi.org/10.1038/s41578-024-00702-0
EP  - 627
N2  - Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an insulator caused by electrical stress. It is one of the major reliability issues in electronic devices using insulating films as gate insulators and in energy and memory capacitors. Despite extensive studies, our understanding of the physical mechanisms driving the breakdown process remains incomplete, and atomistic models describing the dielectric breakdown are controversial. This Review surveys the enormous amount of data and knowledge accumulated from experimental and theoretical studies of dielectric breakdown in different insulating materials, focusing on describing phenomenological models and novel computational approaches.
AV  - public
TI  - Dielectric breakdown of oxide films in electronic devices
Y1  - 2024/09//
ER  -