TY  - JOUR
A1  - Iyer, PP
A1  - Prescott, S
A1  - Addamane, S
A1  - Jung, H
A1  - Renteria, E
A1  - Henshaw, J
A1  - Mounce, A
A1  - Luk, TS
A1  - Mitrofanov, O
A1  - Brener, I
PB  - AMER CHEMICAL SOC
Y1  - 2024///
IS  - 16
KW  - quantum optics dielectric metasurfaces single-photon sources GaAs quantum dot
TI  - Control of Quantized Spontaneous Emission from Single GaAs Quantum Dots Embedded in Huygens? Metasurfaces
SP  - 4749
UR  - http://dx.doi.org/10.1021/acs.nanolett.3c04846
VL  - 24
N2  - Advancements in photonic quantum information systems (QIS) have driven the development of high-brightness, on-demand, and indistinguishable semiconductor epitaxial quantum dots (QDs) as single photon sources. Strain-free, monodisperse, and spatially sparse local-droplet-etched (LDE) QDs have recently been demonstrated as a superior alternative to traditional Stranski-Krastanov QDs. However, integration of LDE QDs into nanophotonic architectures with the ability to scale to many interacting QDs is yet to be demonstrated. We present a potential solution by embedding isolated LDE GaAs QDs within an Al0.4Ga0.6As Huygens? metasurface with spectrally overlapping fundamental electric and magnetic dipolar resonances. We demonstrate for the first time a position- and size-independent, 1 order of magnitude increase in the collection efficiency and emission lifetime control for single-photon emission from LDE QDs embedded within the Huygens? metasurfaces. Our results represent a significant step toward leveraging the advantages of LDE QDs within nanophotonic architectures to meet the scalability demands of photonic QIS.
AV  - restricted
JF  - Nano Letters
EP  - 4757
N1  - This version is the author accepted manuscript. For information on re-use, please refer to the publisher's terms and conditions.
ID  - discovery10192423
ER  -