@article{discovery10192423,
            year = {2024},
          number = {16},
           title = {Control of Quantized Spontaneous Emission from Single GaAs Quantum Dots Embedded in Huygens' Metasurfaces},
           pages = {4749--4757},
          volume = {24},
            note = {This version is the author accepted manuscript. For information on re-use, please refer to the publisher's terms and conditions.},
       publisher = {AMER CHEMICAL SOC},
         journal = {Nano Letters},
          author = {Iyer, PP and Prescott, S and Addamane, S and Jung, H and Renteria, E and Henshaw, J and Mounce, A and Luk, TS and Mitrofanov, O and Brener, I},
             url = {http://dx.doi.org/10.1021/acs.nanolett.3c04846},
        abstract = {Advancements in photonic quantum information systems (QIS) have driven the development of high-brightness, on-demand, and indistinguishable semiconductor epitaxial quantum dots (QDs) as single photon sources. Strain-free, monodisperse, and spatially sparse local-droplet-etched (LDE) QDs have recently been demonstrated as a superior alternative to traditional Stranski-Krastanov QDs. However, integration of LDE QDs into nanophotonic architectures with the ability to scale to many interacting QDs is yet to be demonstrated. We present a potential solution by embedding isolated LDE GaAs QDs within an Al0.4Ga0.6As Huygens' metasurface with spectrally overlapping fundamental electric and magnetic dipolar resonances. We demonstrate for the first time a position- and size-independent, 1 order of magnitude increase in the collection efficiency and emission lifetime control for single-photon emission from LDE QDs embedded within the Huygens' metasurfaces. Our results represent a significant step toward leveraging the advantages of LDE QDs within nanophotonic architectures to meet the scalability demands of photonic QIS.},
        keywords = {quantum optics dielectric metasurfaces single-photon sources GaAs quantum dot}
}