TY  - INPR
KW  - laser
KW  -  metal-active-center
KW  -  next generation optical communication
KW  -  optical amplifier
KW  -  quantum dot
SN  - 2567-3165
A1  - Xu, B
A1  - Jin, C
A1  - Park, JS
A1  - Liu, H
A1  - Lin, X
A1  - Cui, J
A1  - Chen, D
A1  - Qiu, J
AV  - public
ID  - discovery10192337
N1  - © 2024 The Authors. InfoMat published by UESTC and John Wiley & Sons Australia, Ltd.

This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
JF  - InfoMat
TI  - Emerging near-infrared luminescent materials for next-generation broadband optical communications
PB  - Wiley
N2  - The rapid development of emerging technologies observed in recent years, such as artificial intelligence, machine learning, mobile internet, big data, cloud computing, and the Internet of Everything, are generating escalating demands for expanding the capacity density, and speed in next-generation optical communications. This poses a significant challenge to existing communication techniques. Within this context, the integration of near-infrared broadband, tunable, and high-gain luminescent materials into silicon optical circuits or fiber architectures to transmit and modulate light shows enormous potential for advancing next-generation communication techniques. Here, this review provides an overview of the recent breakthroughs in near-infrared luminescent epitaxial/colloidal quantum dots, and metal-active-center-doped materials for broadband optical amplifiers and tunable lasers. We also expound on efforts to enhance the bandwidth and gain of these materials-based amplifiers and lasers, exploring the challenges associate with developing ultra-broadband and high-speed optical communication systems. Additionally, the potential applications in Fifth Generation Fixed Networks, integration with 5G and 6G wireless networks, compensation for current Si electronic based CMOS for high computing capability, and the prospects of these light sources for next-generation optoelectronic devices are discussed. (Figure presented.).
Y1  - 2024/05/02/
UR  - http://dx.doi.org/10.1002/inf2.12550
ER  -