TY  - JOUR
TI  - Transparent Conductive Titanium and Fluorine Co-doped Zinc Oxide Films
KW  - Transparent conducting oxides
KW  -  Co-doped Zinc
oxide
KW  -  Titanium and Fluorine co-doped Zinc oxide
KW  -  electronic
materials
KW  -  wide band gap mater
UR  - https://doi.org/10.1002/cplu.202400073
Y1  - 2024/04/09/
PB  - Wiley
A1  - Ramzan, Iqra
A1  - Borowiec, Joanna
A1  - Parkin, Ivan
A1  - Carmalt, Claire J
N2  - Aerosol-assisted chemical vapor deposition (AACVD) was used to deposit highly transparent and conductive titanium or fluorine-doped and titanium-fluorine co-doped ZnO thin films on glass substrate at 450 oC. All films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), UV-Vis spectroscopy, scanning electron spectroscopy (SEM), and four-point probe. The films were 600-680 nm thick, crystalline, and highly transparent (80-87%). The co-doped film consisted of 0.70 at.% titanium and 1 at.% fluorine, and displayed a charger carrier mobility, charge carrier concentration, and a minimum resistivity of 8.4 cm2 V-1 s-1, 3.97 x 1020 cm-3, and 1.69 x 10-3 ? cm, respectively. A band gap of 3.6 eV was observed for the co-doped film. Compared to the undoped and singly doped films, the co-doped film displayed a notably higher structure morphology (more homogenous grains with well-defined boundaries) suitable for transparent conducting oxide applications.
JF  - Chempluschem
AV  - public
ID  - discovery10192299
N1  - © 2024 The Authors. ChemPlusChem published by Wiley-VCH GmbH

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SN  - 2192-6506
ER  -