TY  - GEN
UR  - https://doi.org/10.1109/PVSC43889.2021.9518655
A1  - Ashfari, H
A1  - Durant, BK
A1  - Thrasher, T
A1  - Abshire, L
A1  - Whiteside, VR
A1  - Chan, S
A1  - Kim, D
A1  - Hatch, S
A1  - Tang, M
A1  - McNatt, JS
A1  - Liu, H
A1  - McCartney, MR
A1  - Smith, DJ
A1  - Sellers, IR
EP  - 682
AV  - public
N2  - The high radiation tolerance of GaAs0.86Sb0.14 based solar cells with a band gap suitable for PV is demonstrated at the low intensity low temperature (LILT) conditions. This system shows remarkable radiation hardness at AM0, and more prominently, at the conditions of several outer planetary targets. This is attributed to an irradiation induced change in the absorber band gap due to local heating and strain relaxation, and the generation of less prohibitive shallow Sb-based defects in the GaAs 1-x Sb x absorber.
KW  - Science & Technology
KW  -  Technology
KW  -  Physical Sciences
KW  -  Energy & Fuels
KW  -  Engineering
KW  -  Electrical & Electronic
KW  -  Physics
KW  -  Applied
KW  -  Engineering
KW  -  Physics
KW  -  GaAs1-xSbx
KW  -  LILT
KW  -  radiation tolerance
ID  - discovery10139815
N1  - This version is the author accepted manuscript. For information on re-use, please refer to the publisher's terms and conditions.
PB  - Institute of Electrical and Electronics Engineers (IEEE)
SP  - 680
TI  - Radiation tolerance of GaAs1-xSbx solar cells: A candidate III-V system for space applications
Y1  - 2021///
SN  - 0160-8371
T3  - IEEE Photovoltaic Specialists Conference
ER  -