TY  - GEN
TI  - Radiation tolerance of GaAs1-xSbx solar cells: A candidate III-V system for space applications
SN  - 0160-8371
Y1  - 2021///
T3  - IEEE Photovoltaic Specialists Conference
SP  - 680
PB  - Institute of Electrical and Electronics Engineers (IEEE)
N1  - This version is the author accepted manuscript. For information on re-use, please refer to the publisher's terms and conditions.
KW  - Science & Technology
KW  -  Technology
KW  -  Physical Sciences
KW  -  Energy & Fuels
KW  -  Engineering
KW  -  Electrical & Electronic
KW  -  Physics
KW  -  Applied
KW  -  Engineering
KW  -  Physics
KW  -  GaAs1-xSbx
KW  -  LILT
KW  -  radiation tolerance
ID  - discovery10139815
A1  - Ashfari, H
A1  - Durant, BK
A1  - Thrasher, T
A1  - Abshire, L
A1  - Whiteside, VR
A1  - Chan, S
A1  - Kim, D
A1  - Hatch, S
A1  - Tang, M
A1  - McNatt, JS
A1  - Liu, H
A1  - McCartney, MR
A1  - Smith, DJ
A1  - Sellers, IR
UR  - https://doi.org/10.1109/PVSC43889.2021.9518655
AV  - public
N2  - The high radiation tolerance of GaAs0.86Sb0.14 based solar cells with a band gap suitable for PV is demonstrated at the low intensity low temperature (LILT) conditions. This system shows remarkable radiation hardness at AM0, and more prominently, at the conditions of several outer planetary targets. This is attributed to an irradiation induced change in the absorber band gap due to local heating and strain relaxation, and the generation of less prohibitive shallow Sb-based defects in the GaAs 1-x Sb x absorber.
EP  - 682
ER  -