TY - GEN TI - Radiation tolerance of GaAs1-xSbx solar cells: A candidate III-V system for space applications SN - 0160-8371 Y1 - 2021/// T3 - IEEE Photovoltaic Specialists Conference SP - 680 PB - Institute of Electrical and Electronics Engineers (IEEE) N1 - This version is the author accepted manuscript. For information on re-use, please refer to the publisher's terms and conditions. KW - Science & Technology KW - Technology KW - Physical Sciences KW - Energy & Fuels KW - Engineering KW - Electrical & Electronic KW - Physics KW - Applied KW - Engineering KW - Physics KW - GaAs1-xSbx KW - LILT KW - radiation tolerance ID - discovery10139815 A1 - Ashfari, H A1 - Durant, BK A1 - Thrasher, T A1 - Abshire, L A1 - Whiteside, VR A1 - Chan, S A1 - Kim, D A1 - Hatch, S A1 - Tang, M A1 - McNatt, JS A1 - Liu, H A1 - McCartney, MR A1 - Smith, DJ A1 - Sellers, IR UR - https://doi.org/10.1109/PVSC43889.2021.9518655 AV - public N2 - The high radiation tolerance of GaAs0.86Sb0.14 based solar cells with a band gap suitable for PV is demonstrated at the low intensity low temperature (LILT) conditions. This system shows remarkable radiation hardness at AM0, and more prominently, at the conditions of several outer planetary targets. This is attributed to an irradiation induced change in the absorber band gap due to local heating and strain relaxation, and the generation of less prohibitive shallow Sb-based defects in the GaAs 1-x Sb x absorber. EP - 682 ER -