eprintid: 10132700 rev_number: 24 eprint_status: archive userid: 608 dir: disk0/10/13/27/00 datestamp: 2021-08-11 09:01:39 lastmod: 2022-02-19 16:15:36 status_changed: 2021-08-11 09:01:39 type: article metadata_visibility: show creators_name: Rybchenko, S creators_name: Ali, S creators_name: Zhang, Y creators_name: Liu, H title: Resonant enhancement of Raman scattering by surface phonon polaritons in GaAs nanowires ispublished: pub divisions: UCL divisions: B04 divisions: C05 divisions: F46 keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, semiconductor nanowires, surface phonon polaritons, Raman scattering, dielectric photonic resonances, surface sensors, OPTICAL PHONONS, GAP, ABSORPTION, DEVICES, INAS, SI note: Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. abstract: Surface optical phonons are normally considered as subtle and poorly reproducible features in the Raman spectra of nanostructured semiconductors, from which little or no information about the sample can be extracted. The present study demonstrates the potential for changing this situation. For a common type of GaAs semiconductor nanowire (NW), we have shown that due to a combination of size-resonant light concentration, tapered shape and favourable scattering geometry, the surface phonon polariton (SPhP) Raman signal can be enhanced by orders of magnitude. The high signal gain enables routine detailed characterisation of the SPhP peak on an individual NW level, revealing its polarisation properties and spectral shift under variation of the dielectric environment. This detailed characterisation was conducted using very low excitation power density despite high absorption of the excitation light in the NW material. The findings provide an effective way to use SPhP Raman scattering in the characterisation of dielectric NWs and the prospect of developing novel surface sensors. date: 2021-11-25 publisher: IOP PUBLISHING LTD official_url: https://doi.org/10.1088/1361-6463/ac1a32 oa_status: green full_text_type: pub language: eng primo: open primo_central: open_green article_type_text: Article verified: verified_manual elements_id: 1881312 doi: 10.1088/1361-6463/ac1a32 lyricists_name: Liu, Huiyun lyricists_id: HLIUX22 actors_name: Flynn, Bernadette actors_id: BFFLY94 actors_role: owner full_text_status: public publication: Journal of Physics D: Applied Physics volume: 54 number: 47 article_number: 475111 pages: 12 issn: 1361-6463 citation: Rybchenko, S; Ali, S; Zhang, Y; Liu, H; (2021) Resonant enhancement of Raman scattering by surface phonon polaritons in GaAs nanowires. Journal of Physics D: Applied Physics , 54 (47) , Article 475111. 10.1088/1361-6463/ac1a32 <https://doi.org/10.1088/1361-6463%2Fac1a32>. Green open access document_url: https://discovery.ucl.ac.uk/id/eprint/10132700/1/Rybchenko_2021_J._Phys._D__Appl._Phys._54_475111.pdf