TY  - GEN
N1  - This version is the version of record. For information on re-use, please refer to the publisher?s terms and conditions.
UR  - https://doi.org/10.1117/12.2589118
Y1  - 2021/04/18/
A1  - Kryzhanovskaya, N
A1  - Moiseev, E
A1  - Nadtochiy, A
A1  - Maximov, M
A1  - Dragunova, A
A1  - Fetisova, M
A1  - Kulagina, M
A1  - Guseva, Y
A1  - Mintairov, S
A1  - Kalyuzhnyy, N
A1  - Tang, M
A1  - Liao, M
A1  - Wu, J
A1  - Chen, S
A1  - Liu, H
A1  - Zhukov, A
AV  - public
ID  - discovery10131934
N2  - A method of hybrid integration of quantum dot microdisk lasers with silicon wafer is proposed and realized. In addition to the possibility of combining microlasers with various silicon-based electronic and photonic devices, this makes it possible to significantly improve heat removal from the active region of the microlaser. The thermal resistance normalized to the mesa area reaches the level of about 0.002 (K/W)*cm2, which is significantly lower than the corresponding values of QD microlasers on GaAs substrate and monolithically grown on Si. As a result, the threshold current as well as current-induced shift of emission wavelength are reduced in continuous-wave regime.
PB  - SPIE
TI  - Monolithic and hybrid integration of InAs/GaAs quantum dot microdisk lasers on silicon
T3  - Proceedings of SPIE
CY  - Online conference
ER  -