TY  - GEN
N2  - Quantum dot (QD) lasers monolithically grown on silicon substrates have been
considered as a promising approach for on-chip light sources in Si photonics. In this paper, the
recent progress in Si-based InAs/GaAs QD lasers at 1300nm wavelength is demonstrated.
ID  - discovery10104911
UR  - https://doi.org/10.1364/OEDI.2019.OTh1C.1
PB  - OSA
CY  - Wuhan, China
A1  - Liu, Z
A1  - Liao, M
A1  - Hantschmann, C
A1  - Wang, Y
A1  - Zhou, T
A1  - Tang, M
A1  - Park, JS
A1  - Zhang, Z
A1  - Chen, S
A1  - Seeds, A
A1  - Penty, R
A1  - White, I
A1  - Yu, S
A1  - Liu, H
TI  - Roadmap of 1300-nm InAs/GaAs quantum dot laser grown on silicon for silicon photonics
Y1  - 2019/11/14/
AV  - public
N1  - This version is the author accepted manuscript. For information on re-use, please refer to the publisher?s terms and conditions.
ER  -