@inproceedings{discovery10104911,
            note = {This version is the author accepted manuscript. For information on re-use, please refer to the publisher's terms and conditions.},
         address = {Wuhan, China},
       booktitle = {Optics InfoBase Conference Papers},
           month = {November},
            year = {2019},
           title = {Roadmap of 1300-nm InAs/GaAs quantum dot laser grown on silicon for silicon photonics},
       publisher = {OSA},
         journal = {Optics InfoBase Conference Papers},
             url = {https://doi.org/10.1364/OEDI.2019.OTh1C.1},
        abstract = {Quantum dot (QD) lasers monolithically grown on silicon substrates have been
considered as a promising approach for on-chip light sources in Si photonics. In this paper, the
recent progress in Si-based InAs/GaAs QD lasers at 1300nm wavelength is demonstrated.},
          author = {Liu, Z and Liao, M and Hantschmann, C and Wang, Y and Zhou, T and Tang, M and Park, JS and Zhang, Z and Chen, S and Seeds, A and Penty, R and White, I and Yu, S and Liu, H}
}