eprintid: 10099692
rev_number: 15
eprint_status: archive
userid: 608
dir: disk0/10/09/96/92
datestamp: 2020-06-04 10:00:05
lastmod: 2021-10-18 22:45:07
status_changed: 2020-06-04 10:00:05
type: article
metadata_visibility: show
creators_name: Mudiyanselage, K
creators_name: Nadeem, MA
creators_name: Raboui, HA
creators_name: Idriss, H
title: Growth, characterization, and stability testing of epitaxial MgO (100) on GaAs (100)
ispublished: pub
divisions: UCL
divisions: B04
divisions: C06
divisions: F56
keywords: Epitaxial MgO (100) films, GaAs (100), Flake-like Mg(OH)2 structures, MgO (100) grown on GaAs (100), Lateral misfit between MgO (100) and GaAs (100)
note: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
abstract: Epitaxial MgO (100) films have been grown on GaAs (100) by evaporation of Mg in the presence of 5 × 10−6 Torr of oxygen. Prior to the growth of MgO, the GaAs (100) substrate was cleaned by Ar ion sputtering and annealing. MgO (100) on GaAs (100) was in situ characterized with Auger electron spectroscopy (AES), and ex situ by scanning electron microscopy (SEM), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and energy–dispersive X–ray spectroscopy (EDX). X-ray diffraction patterns indicated that the MgO film has grown predominantly in the cubic phase with the (100) plane parallel to the GaAs (100) substrate. HRTEM results have confirmed the epitaxial growth of MgO with MgO (100)[001]║ GaAs (100)[001]. Despite the high lattice misfit, the epitaxial MgO (100) is grown on GaAs (100) due to the 4: 3 relationship (4 aMgO: 3 aGaAs) between MgO (100) and GaAs (100). The formation of a 4:3 superstructure reduces the lateral misfit between MgO (100) and GaAs (100) to ≈0.65%. To test the potential of MgO as a protection layer for III-V semiconductor based photo-electro catalytic devices for water splitting in alkaline media the reaction of MgO films with H2O and NaOH was investigated. Flake-like Mg(OH)2 structures appear to have formed on top of the MgO films treated with NaOH.
date: 2020-09
date_type: published
publisher: Elsevier BV
official_url: https://doi.org/10.1016/j.susc.2020.121625
oa_status: green
full_text_type: other
language: eng
primo: open
primo_central: open_green
verified: verified_manual
elements_id: 1787277
doi: 10.1016/j.susc.2020.121625
lyricists_name: Idriss, Hicham
lyricists_id: HIDRI57
actors_name: Allington-Smith, Dominic
actors_id: DAALL44
actors_role: owner
full_text_status: public
publication: Surface Science
volume: 699
article_number: 121625
citation:        Mudiyanselage, K;    Nadeem, MA;    Raboui, HA;    Idriss, H;      (2020)    Growth, characterization, and stability testing of epitaxial MgO (100) on GaAs (100).                   Surface Science , 699     , Article 121625.  10.1016/j.susc.2020.121625 <https://doi.org/10.1016/j.susc.2020.121625>.       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/10099692/1/Idriss_Revised%20Mudiyanselage%20et%20al%20No%20Highlights.pdf