@inproceedings{discovery10089040,
            year = {2016},
       booktitle = {Proceedings of the  2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)},
           title = {Silicon-based III-V quantum-dot devices for silicon photonics},
           pages = {118--119},
       publisher = {IEEE},
         journal = {2016 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP)},
            note = {Silicon, Gallium arsenide, Quantum dot lasers, Substrates, Photonics, Quantum well lasers},
          author = {Wu, J and Chen, S and Tang, M and Liao, M and Liu, H},
        abstract = {Monolithically integrating III-V lasers on Si is the most promising solution to overcome the issue of lack of efficient light sources on Si platform. We demonstrated the first practical silicon-based telecommunications-wavelength InAs/GaAs quantum dot lasers with low threshold current density, high output power, high operation temperature and long lifetime.},
             url = {https://doi.org/10.1109/PHOSST.2016.7548748},
        keywords = {Science \& Technology, Physical Sciences, Technology, Optics, Telecommunications}
}