TY  - JOUR
EP  - 5723
AV  - restricted
Y1  - 2016/06/01/
TI  - Semiconductor Sensitized Solar Cells Based on BiVO4-Sensitized Mesoporous SnO2 Photoanodes
KW  - Science & Technology
KW  -  Physical Sciences
KW  -  Technology
KW  -  Chemistry
KW  -  Multidisciplinary
KW  -  Nanoscience & Nanotechnology
KW  -  Materials Science
KW  -  Multidisciplinary
KW  -  Physics
KW  -  Applied
KW  -  Physics
KW  -  Condensed Matter
KW  -  Chemistry
KW  -  Science & Technology - Other Topics
KW  -  Materials Science
KW  -  Physics
KW  -  Solar Cells
KW  -  Semiconductor
KW  -  BiVO4
KW  -  Sensitizer
KW  -  BIVO4
KW  -  DYE
KW  -  CRYSTAL
KW  -  FILMS
KW  -  OXIDE
PB  - AMER SCIENTIFIC PUBLISHERS
ID  - discovery10085937
N2  - Low cost, stable and visible-light-responsive bismuth vanadate (BiVO4) was used as the light absorbing material to fabricate a low bandgap oxide solar cell on mesoporous SnO2 photoanode. BiVO4 nanoparticles were grown on the mesoporous SnO2 films employing successive ionic layer adsorption and reaction process. The optimized BiVO4 solar cell shows an incident photon to current conversion efficiency of more than 60% at a wide range of visible region (350 nm?450 nm), leading to a power conversion efficiency of 0.56% at AM1.5, 100 mW· cm?2. This result provides important insights into the low cost and robust oxide solar cells.
N1  - This version is the author accepted manuscript. For information on re-use, please refer to the publisher?s terms and conditions.
IS  - 6
SP  - 5719
VL  - 16
A1  - Li, Y
A1  - Zhu, J
A1  - Chen, S
A1  - Liu, F
A1  - Lv, M
A1  - Wei, J
A1  - Huang, Y
A1  - Huo, Z
A1  - Hu, L
A1  - Tang, J
A1  - Dai, S
JF  - Journal of Nanoscience and Nanotechnology
UR  - https://doi.org/10.1166/jnn.2016.12062
ER  -