@article{discovery10085937,
          number = {6},
           month = {June},
       publisher = {AMER SCIENTIFIC PUBLISHERS},
            year = {2016},
           title = {Semiconductor Sensitized Solar Cells Based on BiVO4-Sensitized Mesoporous SnO2 Photoanodes},
         journal = {Journal of Nanoscience and Nanotechnology},
          volume = {16},
            note = {This version is the author accepted manuscript. For information on re-use, please refer to the publisher's terms and conditions.},
           pages = {5719--5723},
        keywords = {Science \& Technology, Physical Sciences, Technology, Chemistry, Multidisciplinary, Nanoscience \& Nanotechnology, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter, Chemistry, Science \& Technology - Other Topics, Materials Science, Physics, Solar Cells, Semiconductor, BiVO4, Sensitizer, BIVO4, DYE, CRYSTAL, FILMS, OXIDE},
             url = {https://doi.org/10.1166/jnn.2016.12062},
          author = {Li, Y and Zhu, J and Chen, S and Liu, F and Lv, M and Wei, J and Huang, Y and Huo, Z and Hu, L and Tang, J and Dai, S},
        abstract = {Low cost, stable and visible-light-responsive bismuth vanadate (BiVO4) was used as the light absorbing material to fabricate a low bandgap oxide solar cell on mesoporous SnO2 photoanode. BiVO4 nanoparticles were grown on the mesoporous SnO2 films employing successive ionic layer adsorption and reaction process. The optimized BiVO4 solar cell shows an incident photon to current conversion efficiency of more than 60\% at a wide range of visible region (350 nm-450 nm), leading to a power conversion efficiency of 0.56\% at AM1.5, 100 mW. cm?2. This result provides important insights into the low cost and robust oxide solar cells.}
}