TY  - GEN
Y1  - 2019/02/27/
TI  - Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates (UCL Research Poster)
AV  - public
N2  - To develop a mid-wave infrared photodetector using type 2 superlattice structure with silicon substrate. ? To develop a tailor-made type 2 superlattice structure. ? To optimise fabrication methods. ? To develop a large focal plan array sensor. ? To develop a prototype.
UR  - https://www.grad.ucl.ac.uk/comp/2018-2019/research-poster-competition/
A1  - González Burguete, C
ID  - discovery10084609
KW  - T2SL
KW  -  GaAs
ER  -