eprintid: 10084608
rev_number: 15
eprint_status: archive
userid: 608
dir: disk0/10/08/46/08
datestamp: 2023-06-22 11:37:00
lastmod: 2023-06-22 11:37:00
status_changed: 2023-06-22 11:37:00
type: poster
metadata_visibility: show
creators_name: González Burguete, C
title: Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates (I)
divisions: UCL
divisions: A01
divisions: B04
divisions: C05
divisions: F46
keywords: T2SL, GaAs
abstract: p-i-n InAs/GaSb* type II superlattice (SL) photodiodes were directly grown on Si* substrates. SL structures were grown monolithically on miscut Si substrates via a 10nm AlSb* nucleation layer. AFM and XRD measurements revealed degraded material quality of type II superlattices grown on Si, compared with the sample grown on GaAs. PL characterization indicates comparable optical properties with about 39% deduction of peak intensity. Dark current measurements were also used to study the electrical properties of the samples.
date: 2018-05-16
date_type: published
official_url: https://www.ee.ucl.ac.uk/mildner/mildner-lecture-2018
oa_status: green
full_text_type: other
language: eng
primo: open
primo_central: open_green
verified: verified_manual
elements_id: 1712653
lyricists_name: Gonzalez Burguete, Claudia
lyricists_id: CSGON81
actors_name: Gonzalez Burguete, Claudia
actors_id: CSGON81
actors_role: owner
full_text_status: public
event_title: The Mildner Memorial Lecture 2018
event_location: London, UK
event_dates: 16 May 2018
institution: The Mildner Memorial Lecture
citation:        González Burguete, C;      (2018)    Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates (I).                   Presented at: The Mildner Memorial Lecture 2018, London, UK.       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/10084608/1/Direct%20growth%20of%20InAsGaSb%20type%20II%20superlattice%20photodiodes%20on%20silicon%20substrates%20-%20CGB.pdf