%C London, UK
%K T2SL, GaAs
%L discovery10084608
%T Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates (I)
%D 2018
%X p-i-n InAs/GaSb* type II superlattice (SL) photodiodes were directly grown on Si* substrates. SL structures were grown monolithically on miscut Si substrates via a 10nm AlSb* nucleation layer. AFM and XRD measurements revealed degraded material quality of type II superlattices grown on Si, compared with the sample grown on GaAs. PL characterization indicates comparable optical properties with about 39% deduction of peak intensity. Dark current measurements were also used to study the electrical properties of the samples.
%A C González Burguete
%I The Mildner Memorial Lecture