?url_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Adc&rft.title=Direct+growth+of+InAsGaSb+type+II+superlattice+photodiodes+on+silicon+substrates+(I)&rft.creator=Gonz%C3%A1lez+Burguete%2C+C&rft.description=p-i-n+InAs%2FGaSb*+type+II+superlattice+(SL)+photodiodes+were+directly+grown+on+Si*+substrates.+SL+structures+were+grown+monolithically+on+miscut+Si+substrates+via+a+10nm+AlSb*+nucleation+layer.+AFM+and+XRD+measurements+revealed+degraded+material+quality+of+type+II+superlattices+grown+on+Si%2C+compared+with+the+sample+grown+on+GaAs.+PL+characterization+indicates+comparable+optical+properties+with+about+39%25+deduction+of+peak+intensity.+Dark+current+measurements+were+also+used+to+study+the+electrical+properties+of+the+samples.&rft.subject=T2SL%2C+GaAs&rft.date=2018-05-16&rft.type=Poster&rft.publisher=The+Mildner+Memorial+Lecture&rft.language=eng&rft.source=+++Presented+at%3A+The+Mildner+Memorial+Lecture+2018%2C+London%2C+UK.+(2018)+++++&rft.format=text&rft.identifier=https%3A%2F%2Fdiscovery.ucl.ac.uk%2Fid%2Feprint%2F10084608%2F1%2FDirect%2520growth%2520of%2520InAsGaSb%2520type%2520II%2520superlattice%2520photodiodes%2520on%2520silicon%2520substrates%2520-%2520CGB.pdf&rft.identifier=https%3A%2F%2Fdiscovery.ucl.ac.uk%2Fid%2Feprint%2F10084608%2F&rft.rights=open