eprintid: 10084597
rev_number: 15
eprint_status: archive
userid: 608
dir: disk0/10/08/45/97
datestamp: 2023-06-22 11:30:25
lastmod: 2023-06-22 11:30:25
status_changed: 2023-06-22 11:30:25
type: poster
metadata_visibility: show
creators_name: González Burguete, C
title: Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates (II)
divisions: UCL
divisions: A01
divisions: B04
divisions: C05
divisions: F46
keywords: T2SL, superlattice, GaAs
abstract: The project is creating of an InAs/GaSb* type II superlattice (T2SL) MWIR (mid-wave infrared) photodiode directly grown on Si substrate for use in an infrared CMOS camera. The first step towards this goal was to compare the basic nip structure grown directly on Si substrate with the same structure grown also on GaAs substrate. This Si structure was the first structure grown using a molecular beam epitaxy machine (MBE), which was built by the MBE group at UCL. The results obtained from the GaAs structure and the Si structure are similar in structural and optical properties. The only significant difference was the photoluminescence peak of Si structure which was 39% lower than the one of the GaAs structure[2]. The current project compares three basic photodiode structures nip, pin and piBn (with barrier) grown all on GaAs substrates to maximise the electrical and optical outputs. The goal was obtaining detailed analysis of each structure in order to find the structure that yields the best results in order to transfer this onto a Si substrate. The new structure to be grown on Si substrate is therefore expected to have improved electrical and optical performance.
date: 2019-07-04
date_type: published
official_url: https://www.ucl.ac.uk/electronic-electrical-engineering/news/2019/jul/barlow-memorial-lecture-and-prizegiving-2019-video-now-available
oa_status: green
full_text_type: other
language: eng
primo: open
primo_central: open_green
verified: verified_manual
elements_id: 1712648
lyricists_name: Gonzalez Burguete, Claudia
lyricists_id: CSGON81
actors_name: Gonzalez Burguete, Claudia
actors_id: CSGON81
actors_role: owner
full_text_status: public
event_title: Barlow Memorial Lecture and Prizegiving 2019
event_location: London, UK
event_dates: 04 July 2019
institution: Barlow Lecture
citation:        González Burguete, C;      (2019)    Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates (II).                   Presented at: Barlow Memorial Lecture and Prizegiving 2019, London, UK.       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/10084597/1/Direct%20growth%20of%20InAsGaSb%20type%20II%20superlattice%20photodiodes%20on%20silicon%20substrates%20-%20July%202019%20%28final%29.pdf