?url_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Adc&rft.title=Direct+growth+of+InAsGaSb+type+II+superlattice+photodiodes+on+silicon+substrates+(II)&rft.creator=Gonz%C3%A1lez+Burguete%2C+C&rft.description=The+project+is+creating+of+an+InAs%2FGaSb*+type+II+superlattice+(T2SL)+MWIR+(mid-wave+infrared)+photodiode+directly+grown+on+Si+substrate+for+use+in+an+infrared+CMOS+camera.+The+first+step+towards+this+goal+was+to+compare+the+basic+nip+structure+grown+directly+on+Si+substrate+with+the+same+structure+grown+also+on+GaAs+substrate.+This+Si+structure+was+the+first+structure+grown+using+a+molecular+beam+epitaxy+machine+(MBE)%2C+which+was+built+by+the+MBE+group+at+UCL.+The+results+obtained+from+the+GaAs+structure+and+the+Si+structure+are+similar+in+structural+and+optical+properties.+The+only+significant+difference+was+the+photoluminescence+peak+of+Si+structure+which+was+39%25+lower+than+the+one+of+the+GaAs+structure%5B2%5D.+The+current+project+compares+three+basic+photodiode+structures+nip%2C+pin+and+piBn+(with+barrier)+grown+all+on+GaAs+substrates+to+maximise+the+electrical+and+optical+outputs.+The+goal+was+obtaining+detailed+analysis+of+each+structure+in+order+to+find+the+structure+that+yields+the+best+results+in+order+to+transfer+this+onto+a+Si+substrate.+The+new+structure+to+be+grown+on+Si+substrate+is+therefore+expected+to+have+improved+electrical+and+optical+performance.&rft.subject=T2SL%2C+superlattice%2C+GaAs&rft.date=2019-07-04&rft.type=Poster&rft.publisher=Barlow+Lecture&rft.language=eng&rft.source=+++Presented+at%3A+Barlow+Memorial+Lecture+and+Prizegiving+2019%2C+London%2C+UK.+(2019)+++++&rft.format=text&rft.identifier=https%3A%2F%2Fdiscovery.ucl.ac.uk%2Fid%2Feprint%2F10084597%2F1%2FDirect%2520growth%2520of%2520InAsGaSb%2520type%2520II%2520superlattice%2520photodiodes%2520on%2520silicon%2520substrates%2520-%2520July%25202019%2520%2528final%2529.pdf&rft.identifier=https%3A%2F%2Fdiscovery.ucl.ac.uk%2Fid%2Feprint%2F10084597%2F&rft.rights=open