eprintid: 10080694 rev_number: 31 eprint_status: archive userid: 608 dir: disk0/10/08/06/94 datestamp: 2019-08-30 14:46:59 lastmod: 2021-10-06 22:56:41 status_changed: 2019-08-30 14:46:59 type: article metadata_visibility: show creators_name: Gott, JA creators_name: Beanland, R creators_name: Fonseka, HA creators_name: Peters, JJP creators_name: Zhang, Y creators_name: Liu, H creators_name: Sanchez, AM title: Defect Dynamics in Self-Catalyzed III-V Semiconductor Nanowires ispublished: pub divisions: UCL divisions: B04 divisions: C05 divisions: F46 keywords: Defects, In-Situ, Nanowires, STEM, TEM note: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. abstract: The droplet consumption step in self-catalyzed III–V semiconductor nanowires can produce material that contains a high density of line defects. Interestingly, these defects are often associated with twin boundaries and have null Burgers vector, i.e., no long-range strain field. Here, we analyze their stability by considering the forces that act on them and use in situ aberration corrected scanning transmission electron microscopy (STEM) to observe their behavior in GaAsP nanowires (NWs) using short annealing cycles. Their movement appears to be consistent with the thermally activated single- or double-kink mechanisms of dislocation glide, with velocities that do not exceed 1 nm s–1. We find that motion of individual defects depends on their size, position, and surrounding environment and set an upper limit to activation energy around 2 eV. The majority of defects (>70%) are removed by our postgrowth annealing for several seconds at temperatures in excess of 640 °C, suggesting that in situ annealing during growth at lower temperatures would significantly improve material quality. The remaining defects do not move at all and are thermodynamically stable in the nanowire. date: 2019-07-10 date_type: published publisher: AMER CHEMICAL SOC official_url: https://doi.org/10.1021/acs.nanolett.9b01508 oa_status: green full_text_type: other primo: open primo_central: open_green verified: verified_manual elements_id: 1671527 doi: 10.1021/acs.nanolett.9b01508 language_elements: English lyricists_name: Liu, Huiyun lyricists_name: Zhang, Yunyan lyricists_id: HLIUX22 lyricists_id: ZHANI48 actors_name: Austen, Jennifer actors_id: JAUST66 actors_role: owner full_text_status: public publication: Nano Letters volume: 19 number: 7 pagerange: 4574-4580 pages: 7 issn: 1530-6992 citation: Gott, JA; Beanland, R; Fonseka, HA; Peters, JJP; Zhang, Y; Liu, H; Sanchez, AM; (2019) Defect Dynamics in Self-Catalyzed III-V Semiconductor Nanowires. Nano Letters , 19 (7) pp. 4574-4580. 10.1021/acs.nanolett.9b01508 <https://doi.org/10.1021/acs.nanolett.9b01508>. Green open access document_url: https://discovery.ucl.ac.uk/id/eprint/10080694/10/Zhang%20Gott%20et%20al_NL_SubmitVersion.pdf document_url: https://discovery.ucl.ac.uk/id/eprint/10080694/5/Zhang%20Gott%20et%20al_NL_SI_SubmitVersion.pdf