TY  - JOUR
UR  - https://doi.org/10.1088/1361-6641/ab2c24
Y1  - 2019/08//
A1  - Liao, M
A1  - Li, W
A1  - Tang, M
A1  - Li, A
A1  - Chen, S
A1  - Seeds, A
A1  - Liu, H
N2  - The ability to tailor the bandgap of III?V compound semiconductors spatially, across the wafer is highly desirable for monolithically integrating photonic components with multi-functions. Using rapid thermal annealing with SiO2 and TiO2 capping layers as a selective area intermixing technique, we have demonstrated selective area bandgap tuning of III?V quantum dot (QD) material on a silicon (Si) substrate. Electrically pumped InAs/GaAs QD lasers directly grown on Si with dual-wavelength lasing emissions of 1275 and 1313 nm have been fabricated by this technique. This result indicates that the selective area intermixing technique can potentially be used in optical integrated circuits for Si photonics.
TI  - Selective area intermixing of III-V quantum-dot lasers grown on silicon with two wavelength lasing emissions
EP  - 9
N1  - Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
KW  - Science & Technology
KW  -  Technology
KW  -  Physical Sciences
KW  -  Engineering
KW  -  Electrical & Electronic
KW  -  Materials Science
KW  -  Multidisciplinary
KW  -  Physics
KW  -  Condensed Matter
KW  -  Engineering
KW  -  Materials Science
KW  -  Physics
KW  -  quantum-dot laser
KW  -  intermixing
KW  -  silicon photonics
KW  -  ELECTRONIC-STRUCTURE
KW  -  SI
AV  - public
ID  - discovery10078722
SN  - 1361-6641
PB  - IOP PUBLISHING LTD
VL  - 34
IS  - 8
JF  - Semiconductor Science and Technology
ER  -