eprintid: 10077144
rev_number: 38
eprint_status: archive
userid: 608
dir: disk0/10/07/71/44
datestamp: 2019-07-02 11:46:36
lastmod: 2021-10-04 00:23:18
status_changed: 2019-07-25 11:47:33
type: article
metadata_visibility: show
creators_name: Hicks, M-L
creators_name: Pakpour-Tabrizi, AC
creators_name: Zuerbig, V
creators_name: Kirste, L
creators_name: Nebel, C
creators_name: Jackman, RB
title: Optimizing reactive ion etching to remove sub-surface polishing damage on diamond
ispublished: pub
divisions: UCL
divisions: B04
divisions: C05
divisions: F46
note: This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions.
abstract: Low defect smooth substrates are essential to achieve high quality diamond epitaxial growth and high performance devices. The optimization of the Ar/O2/CF4 reactive ion etching (RIE) plasma treatment for diamond substrate smoothing and its effectiveness to remove subsurface polishing damage are characterized. An O2/CF4 RIE process and the effect of different process parameters (inductively coupled plasma, platen power, and pressure) were initially examined. This process, however, still produced a detrimental effect to surface roughness, with etch pits across the surface of the sample. The addition of argon to the process achieved near-zero surface pit density and reduced roughness by 20%–44% after 6 and 10 μm etching. Iterative high-resolution X-ray diffraction measurements provided a nondestructive tool to examine the effectiveness of polishing damage removal and in this case reduced after removal of 6 μm of material from the surface of the diamond substrate with the smoothing treatment.
date: 2019-06-28
date_type: published
publisher: AIP Publishing
official_url: https://doi.org/10.1063/1.5094751
oa_status: green
full_text_type: pub
language: eng
primo: open
primo_central: open_green
verified: verified_manual
elements_id: 1668178
doi: 10.1063/1.5094751
lyricists_name: Hicks, Marie-Laure
lyricists_name: Jackman, Richard
lyricists_id: HICKS03
lyricists_id: RBJAC40
actors_name: Jackman, Richard
actors_id: RBJAC40
actors_role: owner
full_text_status: public
publication: Journal of Applied Physics
volume: 125
number: 24
article_number: 244502
issn: 1089-7550
citation:        Hicks, M-L;    Pakpour-Tabrizi, AC;    Zuerbig, V;    Kirste, L;    Nebel, C;    Jackman, RB;      (2019)    Optimizing reactive ion etching to remove sub-surface polishing damage on diamond.                   Journal of Applied Physics , 125  (24)    , Article 244502.  10.1063/1.5094751 <https://doi.org/10.1063/1.5094751>.       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/10077144/1/Jackman%20VoR1.5094751.pdf