TY  - JOUR
UR  - https://doi.org/10.1021/acsaem.8b01387
SN  - 2574-0962
A1  - Alqahtani, M
A1  - Sathasivam, S
A1  - Alhassan, A
A1  - Cui, F
A1  - Benjaber, S
A1  - Blackman, C
A1  - Zhang, B
A1  - Qin, Y
A1  - Parkin, IP
A1  - Nakamura, S
A1  - Liu, H
A1  - Wu, J
JF  - ACS Applied Energy Materials
VL  - 1
SP  - 6417
IS  - 11
N1  - This version is the author accepted manuscript. For information on re-use, please refer to the publisher?s terms and conditions.
N2  - Indium gallium nitride (InGaN) is an attractive semiconductor, with a tunable direct bandgap for photoelectrochemical water splitting, but it corrodes in aqueous electrolytes. Cobalt oxide (CoOx) is a promising cocatalyst to protect photoelectrodes and accelerate the charge transfer. CoOx is earth-abundant and stable in extremely alkaline conditions and shows high activity for the oxygen evolution reaction (OER). In this work, we demonstrate that CoOx directly deposited onto InGaN/GaN multiple quantum well photoanodes exhibits excellent activity and stability in a strong alkaline electrolyte, 1 M NaOH (pH = 13.7), for water oxidation up to 28 h, while a reference sample without the catalyst degraded rapidly in the alkaline electrolyte. Under simulated solar illumination, the CoOx-modified InGaN/GaN quantum well photoanode showed a high photocurrent density of 1.26 mA cm?2 at 1.23 V and an onset potential of ?0.03 V versus a reversible hydrogen electrode.
ID  - discovery10073811
KW  - indium gallium nitrides; quantum wells; photoelectrochemical water splitting; photoanodes; cobalt oxides
AV  - public
Y1  - 2018/11/26/
EP  - 6424
TI  - InGaN/GaN Multiple Quantum Well Photoanode Modified with Cobalt Oxide for Water Oxidation
ER  -