eprintid: 10073787
rev_number: 27
eprint_status: archive
userid: 608
dir: disk0/10/07/37/87
datestamp: 2019-05-15 14:12:54
lastmod: 2021-09-25 23:16:47
status_changed: 2019-05-15 14:12:54
type: article
metadata_visibility: show
creators_name: Yang, J
creators_name: Jurczak, P
creators_name: Cui, F
creators_name: Li, K
creators_name: Tang, M
creators_name: Billiald, L
creators_name: Beanland, R
creators_name: Sanchez, AM
creators_name: Liu, H
title: Thin Ge buffer layer on silicon for integration of III-V on silicon
ispublished: pub
divisions: UCL
divisions: B04
divisions: C05
divisions: F46
keywords: III-V-Silicon integration, Ge buffer layers, Si photonics
note: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
abstract: Development of Si-based lasers is considered as the key to the realisation of fully integrated Si photonic circuits. Monolithic growth of III-V lasers on Si substrates is one of the most promising solutions for developing a commercially viable Si-based laser. However, the performances of current devices are still hindered by defects, hence the optimisation of crystal quality of the laser structures is of paramount importance. This paper reports on growth optimisation of thin Ge buffer layers on Si as an alternative to thick GaAs buffer layers. This method reduces the overall thickness and lowers the threading dislocation density in III-V semiconductors integrated on silicon platform.
date: 2019-05-15
date_type: published
publisher: ELSEVIER SCIENCE BV
official_url: https://doi.org/10.1016/j.jcrysgro.2019.02.044
oa_status: green
full_text_type: other
language: eng
primo: open
primo_central: open_green
verified: verified_manual
elements_id: 1646099
doi: 10.1016/j.jcrysgro.2019.02.044
lyricists_name: Liu, Huiyun
lyricists_name: Tang, Mingchu
lyricists_name: Yang, Junjie
lyricists_id: HLIUX22
lyricists_id: TANGX88
lyricists_id: JYANG10
actors_name: Austen, Jennifer
actors_id: JAUST66
actors_role: owner
full_text_status: public
publication: Journal of Crystal Growth
volume: 514
pagerange: 109-113
pages: 5
issn: 1873-5002
citation:        Yang, J;    Jurczak, P;    Cui, F;    Li, K;    Tang, M;    Billiald, L;    Beanland, R;         ... Liu, H; + view all <#>        Yang, J;  Jurczak, P;  Cui, F;  Li, K;  Tang, M;  Billiald, L;  Beanland, R;  Sanchez, AM;  Liu, H;   - view fewer <#>    (2019)    Thin Ge buffer layer on silicon for integration of III-V on silicon.                   Journal of Crystal Growth , 514    pp. 109-113.    10.1016/j.jcrysgro.2019.02.044 <https://doi.org/10.1016/j.jcrysgro.2019.02.044>.       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/10073787/3/Liu%20Thin%20Ge%20buffer%20layers%20paper%20-%20final.pdf