eprintid: 10073787 rev_number: 27 eprint_status: archive userid: 608 dir: disk0/10/07/37/87 datestamp: 2019-05-15 14:12:54 lastmod: 2021-09-25 23:16:47 status_changed: 2019-05-15 14:12:54 type: article metadata_visibility: show creators_name: Yang, J creators_name: Jurczak, P creators_name: Cui, F creators_name: Li, K creators_name: Tang, M creators_name: Billiald, L creators_name: Beanland, R creators_name: Sanchez, AM creators_name: Liu, H title: Thin Ge buffer layer on silicon for integration of III-V on silicon ispublished: pub divisions: UCL divisions: B04 divisions: C05 divisions: F46 keywords: III-V-Silicon integration, Ge buffer layers, Si photonics note: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. abstract: Development of Si-based lasers is considered as the key to the realisation of fully integrated Si photonic circuits. Monolithic growth of III-V lasers on Si substrates is one of the most promising solutions for developing a commercially viable Si-based laser. However, the performances of current devices are still hindered by defects, hence the optimisation of crystal quality of the laser structures is of paramount importance. This paper reports on growth optimisation of thin Ge buffer layers on Si as an alternative to thick GaAs buffer layers. This method reduces the overall thickness and lowers the threading dislocation density in III-V semiconductors integrated on silicon platform. date: 2019-05-15 date_type: published publisher: ELSEVIER SCIENCE BV official_url: https://doi.org/10.1016/j.jcrysgro.2019.02.044 oa_status: green full_text_type: other language: eng primo: open primo_central: open_green verified: verified_manual elements_id: 1646099 doi: 10.1016/j.jcrysgro.2019.02.044 lyricists_name: Liu, Huiyun lyricists_name: Tang, Mingchu lyricists_name: Yang, Junjie lyricists_id: HLIUX22 lyricists_id: TANGX88 lyricists_id: JYANG10 actors_name: Austen, Jennifer actors_id: JAUST66 actors_role: owner full_text_status: public publication: Journal of Crystal Growth volume: 514 pagerange: 109-113 pages: 5 issn: 1873-5002 citation: Yang, J; Jurczak, P; Cui, F; Li, K; Tang, M; Billiald, L; Beanland, R; ... Liu, H; + view all <#> Yang, J; Jurczak, P; Cui, F; Li, K; Tang, M; Billiald, L; Beanland, R; Sanchez, AM; Liu, H; - view fewer <#> (2019) Thin Ge buffer layer on silicon for integration of III-V on silicon. Journal of Crystal Growth , 514 pp. 109-113. 10.1016/j.jcrysgro.2019.02.044 <https://doi.org/10.1016/j.jcrysgro.2019.02.044>. Green open access document_url: https://discovery.ucl.ac.uk/id/eprint/10073787/3/Liu%20Thin%20Ge%20buffer%20layers%20paper%20-%20final.pdf