eprintid: 10068089
rev_number: 20
eprint_status: archive
userid: 608
dir: disk0/10/06/80/89
datestamp: 2019-02-18 11:06:28
lastmod: 2021-09-21 22:09:21
status_changed: 2019-02-18 11:06:28
type: proceedings_section
metadata_visibility: show
creators_name: Kim, D
creators_name: Chan, S
creators_name: Tang, M
creators_name: Wu, J
creators_name: Liu, H
title: The influence of direct, delta, and modulation QD Si doping on InAs/GaAs quantum dot solar cells
ispublished: pub
divisions: UCL
divisions: B04
divisions: C05
divisions: F46
keywords: Doping
,
Silicon
,
Gallium arsenide
,
Quantum dots
,
Photovoltaic cells
,
Epitaxial layers
,
Radiative recombination, Quantum dots
,
intermediate band
,
Si doping
,
molecular beam epitaxy
note: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
abstract: The effects of direct, delta, and modulation Si QD doping on InAs/GaAs QDSCs are studied. The PL, EQE, and J-V characterisation results show a clear relationship between the doping methods and the non-radiative recombination. All doped QDSCs exhibited increase in the V-{mathbf{OC}} due to{reduced thermal coupling from QD Si doping. Delta and modulation-doped QDSCs exhibit further improvements in V-{mathbf{OC}} due to reduced non-radiative recombination. Moreover, the modulation-doped QDSC shows improvements in both the current density and the voltage compared with the directly doped QDSC.
date: 2018-11-29
date_type: published
publisher: IEEE
official_url: https://doi.org/10.1109/PVSC.2018.8548028
oa_status: green
full_text_type: other
language: eng
primo: open
primo_central: open_green
verified: verified_manual
elements_id: 1629756
doi: 10.1109/PVSC.2018.8548028
isbn_13: 9781538685297
lyricists_name: Chan, Shun
lyricists_name: Kim, Dongyoung
lyricists_name: Liu, Huiyun
lyricists_name: Tang, Mingchu
lyricists_id: SSCHA28
lyricists_id: DKIMX35
lyricists_id: HLIUX22
lyricists_id: TANGX88
actors_name: Kim, Dongyoung
actors_id: DKIMX35
actors_role: owner
full_text_status: public
publication: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
pagerange: 2759-2762
event_title: 7th World Conference on Photovoltaic Energy Conversion (WCPEC), 10-15 June 2018, Waikoloa Village, HI, USA
book_title: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
citation:        Kim, D;    Chan, S;    Tang, M;    Wu, J;    Liu, H;      (2018)    The influence of direct, delta, and modulation QD Si doping on InAs/GaAs quantum dot solar cells.                     In:  2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).  (pp. pp. 2759-2762).  IEEE       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/10068089/1/D_Kim_Manuscript.pdf