%J 2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)
%C Danvers (MA), USA
%K Measurement by laser beam, Quantum dot lasers, Laser modes, Degradation, Silicon, Optical losses, Cavity resonators
%L discovery10067605
%T Degradation Studies of InAs / GaAs QD Lasers Grown on Si
%O This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
%D 2018
%X Lowering the threshold gain of InAs quantum dot lasers grown on Silicon, significantly extends device lifetime. Measurements on degraded devices show increased optical mode loss is responsible for degradation and a consequent shortening of lasing wavelength.
%A S Shutts
%A CP Allford
%A C Spinnler
%A Z Li
%A M Tang
%A H Liu
%A PM Smowton
%B Proceedings of the 2018 IEEE International Semiconductor Laser Conference (ISLC)
%P 85-86
%I IEEE