TY  - GEN
N1  - This version is the author accepted manuscript. For information on re-use, please refer to the publisher?s terms and conditions.
Y1  - 2018/11/01/
AV  - public
SP  - 85
EP  - 86
TI  - Degradation Studies of InAs / GaAs QD Lasers Grown on Si
A1  - Shutts, S
A1  - Allford, CP
A1  - Spinnler, C
A1  - Li, Z
A1  - Tang, M
A1  - Liu, H
A1  - Smowton, PM
KW  - Measurement by laser beam
KW  -  Quantum dot lasers
KW  -  Laser modes
KW  -  Degradation
KW  -  Silicon
KW  -  Optical losses
KW  -  Cavity resonators
CY  - Danvers (MA), USA
PB  - IEEE
UR  - https://doi.org/10.1109/ISLC.2018.8516178
SN  - 0899-9406
N2  - Lowering the threshold gain of InAs quantum dot lasers grown on Silicon, significantly extends device lifetime. Measurements on degraded devices show increased optical mode loss is responsible for degradation and a consequent shortening of lasing wavelength.
ID  - discovery10067605
ER  -