@inproceedings{discovery10067605,
         journal = {2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)},
            year = {2018},
           title = {Degradation Studies of InAs / GaAs QD Lasers Grown on Si},
       publisher = {IEEE},
           month = {November},
       booktitle = {Proceedings of the 2018 IEEE International Semiconductor Laser Conference (ISLC)},
           pages = {85--86},
            note = {This version is the author accepted manuscript. For information on re-use, please refer to the publisher's terms and conditions.},
         address = {Danvers (MA), USA},
             url = {https://doi.org/10.1109/ISLC.2018.8516178},
          author = {Shutts, S and Allford, CP and Spinnler, C and Li, Z and Tang, M and Liu, H and Smowton, PM},
            issn = {0899-9406},
        abstract = {Lowering the threshold gain of InAs quantum dot lasers grown on Silicon, significantly extends device lifetime. Measurements on degraded devices show increased optical mode loss is responsible for degradation and a consequent shortening of lasing wavelength.},
        keywords = {Measurement by laser beam, Quantum dot lasers, Laser modes, Degradation, Silicon, Optical losses, Cavity resonators}
}