eprintid: 10059742 rev_number: 18 eprint_status: archive userid: 608 dir: disk0/10/05/97/42 datestamp: 2018-11-05 14:18:00 lastmod: 2021-09-25 23:14:03 status_changed: 2018-11-05 14:18:00 type: article metadata_visibility: show creators_name: Sanchez, AM creators_name: Gott, JA creators_name: Fonseka, HA creators_name: Zhang, Y creators_name: Liu, H creators_name: Beanland, R title: Stable Defects in Semiconductor Nanowires ispublished: pub divisions: UCL divisions: B04 divisions: C05 divisions: F46 keywords: Nanowire, defects, STEM, CL note: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. abstract: Semiconductor nanowires are commonly described as being defect-free due to their ability to expel mobile defects with long-range strain fields. Here, we describe previously undiscovered topologically protected line defects with null Burgers vector that, unlike dislocations, are stable in nanoscale crystals. We analyze the defects present in semiconductor nanowires in regions of imperfect crystal growth, i.e., at the nanowire tip formed during consumption of the droplet in self-catalyzed vapor–liquid–solid growth and subsequent vapor–solid shell growth. We use a form of the Burgers circuit method that can be applied to multiply twinned material without difficulty. Our observations show that the nanowire microstructure is very different from bulk material, with line defects either (a) trapped by locks or other defects, (b) arranged as dipoles or groups with a zero total Burgers vector, or (c) have a zero Burgers vector. We find two new line defects with a null Burgers vector, formed from the combination of partial dislocations in twinned material. The most common defect is the three-monolayer high twin facet with a zero Burgers vector. Studies of individual nanowires using cathodoluminescence show that optical emission is quenched in defective regions, showing that they act as strong nonradiative recombination centers. date: 2018-05-09 date_type: published publisher: AMER CHEMICAL SOC official_url: http://dx.doi.org/10.1021/acs.nanolett.8b00620 oa_status: green full_text_type: other language: eng primo: open primo_central: open_green article_type_text: Article verified: verified_manual elements_id: 1558555 doi: 10.1021/acs.nanolett.8b00620 lyricists_name: Liu, Huiyun lyricists_name: Zhang, Yunyan lyricists_id: HLIUX22 lyricists_id: ZHANI48 actors_name: Zhang, Yunyan actors_id: ZHANI48 actors_role: owner full_text_status: public publication: Nano Letters volume: 18 number: 5 pagerange: 3081-3087 pages: 7 issn: 1530-6992 citation: Sanchez, AM; Gott, JA; Fonseka, HA; Zhang, Y; Liu, H; Beanland, R; (2018) Stable Defects in Semiconductor Nanowires. Nano Letters , 18 (5) pp. 3081-3087. 10.1021/acs.nanolett.8b00620 <https://doi.org/10.1021/acs.nanolett.8b00620>. Green open access document_url: https://discovery.ucl.ac.uk/id/eprint/10059742/1/Stable%20Defects%20in%20Semiconductor%20Nanowires.pdf