eprintid: 10059670 rev_number: 17 eprint_status: archive userid: 608 dir: disk0/10/05/96/70 datestamp: 2018-10-31 11:34:46 lastmod: 2021-09-25 23:12:57 status_changed: 2018-10-31 11:34:46 type: article metadata_visibility: show creators_name: Valente, J creators_name: Godde, T creators_name: Zhang, Y creators_name: Mowbray, DJ creators_name: Liu, H title: Light-Emitting GaAs Nanowires on a Flexible Substrate ispublished: pub divisions: UCL divisions: B04 divisions: C05 divisions: F46 keywords: Science & Technology, Physical Sciences, Technology, Chemistry, Multidisciplinary, Chemistry, Physical, Nanoscience & Nanotechnology, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter, Chemistry, Science & Technology - Other Topics, Materials Science, Physics, Nanofabrication, semiconductor nanowires, flexible substrates, photoluminescence, THIN-FILM TRANSISTORS, ARRAY SOLAR-CELLS, SEMICONDUCTOR NANOWIRES, N-JUNCTIONS, SILICON, SHELL, LASERS, ENHANCEMENT, TEMPERATURE, FABRICATION note: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. abstract: Semiconductor nanowire-based devices are among the most promising structures used to meet the current challenges of electronics, optics and photonics. Due to their high surface-to-volume ratio and excellent optical and electrical properties, devices with low power, high efficiency and high density can be created. This is of major importance for environmental issues and economic impact. Semiconductor nanowires have been used to fabricate high performance devices, including detectors, solar cells and transistors. Here, we demonstrate a technique for transferring large-area nanowire arrays to flexible substrates while retaining their excellent quantum efficiency in emission. Starting with a defect-free self-catalyzed molecular beam epitaxy (MBE) sample grown on a Si substrate, GaAs core–shell nanowires are embedded in a dielectric, removed by reactive ion etching and transferred to a plastic substrate. The original structural and optical properties, including the vertical orientation, of the nanowires are retained in the final plastic substrate structure. Nanowire emission is observed for all stages of the fabrication process, with a higher emission intensity observed for the final transferred structure, consistent with a reduction in nonradiative recombination via the modification of surface states. This transfer process could form the first critical step in the development of flexible nanowire-based light-emitting devices. date: 2018-07-01 date_type: published publisher: AMER CHEMICAL SOC official_url: http://dx.doi.org/10.1021/acs.nanolett.8b01100 oa_status: green full_text_type: other language: eng primo: open primo_central: open_green article_type_text: Article verified: verified_manual elements_id: 1573328 doi: 10.1021/acs.nanolett.8b01100 lyricists_name: Liu, Huiyun lyricists_name: Mire Dores Pulido Valente, Joao lyricists_name: Zhang, Yunyan lyricists_id: HLIUX22 lyricists_id: JVALE97 lyricists_id: ZHANI48 actors_name: Liu, Huiyun actors_id: HLIUX22 actors_role: owner full_text_status: public publication: Nano Letters volume: 18 number: 7 pagerange: 4206-4213 pages: 8 issn: 1530-6992 citation: Valente, J; Godde, T; Zhang, Y; Mowbray, DJ; Liu, H; (2018) Light-Emitting GaAs Nanowires on a Flexible Substrate. Nano Letters , 18 (7) pp. 4206-4213. 10.1021/acs.nanolett.8b01100 <https://doi.org/10.1021/acs.nanolett.8b01100>. Green open access document_url: https://discovery.ucl.ac.uk/id/eprint/10059670/1/GaAs%20Nanowires%20on%20a%20Flexible%20Substrate%20-%20NL%20highlighted%2015-05-18.pdf