TY  - JOUR
PB  - AMER CHEMICAL SOC
ID  - discovery10059670
N2  - Semiconductor nanowire-based devices are among the most promising structures used to meet the current challenges of electronics, optics and photonics. Due to their high surface-to-volume ratio and excellent optical and electrical properties, devices with low power, high efficiency and high density can be created. This is of major importance for environmental issues and economic impact. Semiconductor nanowires have been used to fabricate high performance devices, including detectors, solar cells and transistors. Here, we demonstrate a technique for transferring large-area nanowire arrays to flexible substrates while retaining their excellent quantum efficiency in emission. Starting with a defect-free self-catalyzed molecular beam epitaxy (MBE) sample grown on a Si substrate, GaAs core?shell nanowires are embedded in a dielectric, removed by reactive ion etching and transferred to a plastic substrate. The original structural and optical properties, including the vertical orientation, of the nanowires are retained in the final plastic substrate structure. Nanowire emission is observed for all stages of the fabrication process, with a higher emission intensity observed for the final transferred structure, consistent with a reduction in nonradiative recombination via the modification of surface states. This transfer process could form the first critical step in the development of flexible nanowire-based light-emitting devices.
KW  - Science & Technology
KW  -  Physical Sciences
KW  -  Technology
KW  -  Chemistry
KW  -  Multidisciplinary
KW  -  Chemistry
KW  -  Physical
KW  -  Nanoscience & Nanotechnology
KW  -  Materials Science
KW  -  Multidisciplinary
KW  -  Physics
KW  -  Applied
KW  -  Physics
KW  -  Condensed Matter
KW  -  Chemistry
KW  -  Science & Technology - Other Topics
KW  -  Materials Science
KW  -  Physics
KW  -  Nanofabrication
KW  -  semiconductor nanowires
KW  -  flexible substrates
KW  -  photoluminescence
KW  -  THIN-FILM TRANSISTORS
KW  -  ARRAY SOLAR-CELLS
KW  -  SEMICONDUCTOR NANOWIRES
KW  -  N-JUNCTIONS
KW  -  SILICON
KW  -  SHELL
KW  -  LASERS
KW  -  ENHANCEMENT
KW  -  TEMPERATURE
KW  -  FABRICATION
EP  - 4213
AV  - public
Y1  - 2018/07/01/
TI  - Light-Emitting GaAs Nanowires on a Flexible Substrate
SN  - 1530-6992
UR  - http://dx.doi.org/10.1021/acs.nanolett.8b01100
A1  - Valente, J
A1  - Godde, T
A1  - Zhang, Y
A1  - Mowbray, DJ
A1  - Liu, H
JF  - Nano Letters
VL  - 18
SP  - 4206
N1  - This version is the author accepted manuscript. For information on re-use, please refer to the publisher?s terms and conditions.
IS  - 7
ER  -