eprintid: 10059669 rev_number: 25 eprint_status: archive userid: 608 dir: disk0/10/05/96/69 datestamp: 2018-10-31 10:58:13 lastmod: 2021-09-25 23:13:44 status_changed: 2018-10-31 10:58:13 type: article metadata_visibility: show creators_name: Zeng, H creators_name: Yu, X creators_name: Fonseka, HA creators_name: Gott, JA creators_name: Tang, M creators_name: Zhang, Y creators_name: Boras, G creators_name: Xu, J creators_name: Sanchez, AM creators_name: Liu, H title: Hybrid III-V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores ispublished: pub divisions: UCL divisions: B04 divisions: C05 divisions: F46 keywords: Science & Technology, Physical Sciences, Technology, Chemistry, Multidisciplinary, Chemistry, Physical, Nanoscience & Nanotechnology, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter, Chemistry, Science & Technology - Other Topics, Materials Science, Physics, Nanowires, III-V/group IV, hybrid heterostructure, MBE, single-crystalline, FIELD-EFFECT TRANSISTORS, LIGHT-EMITTING DIODE, SILICON, HETEROSTRUCTURES, ELECTRONICS, DETECTORS, GERMANIUM, GROWTH, BAND note: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. abstract: The integration of optically active III–V and electronic-suitable IV materials on the same nanowire could provide a great potential for the combination of photonics and electronics in the nanoscale. In this Letter, we demonstrate the growth of GaAs/Ge core–shell nanowires on Si substrates by molecular beam epitaxy and investigate the radial and axial Ge epitaxy on GaAs nanowires in detail. High-quality core–shell nanowires with smooth side facets and dislocation-free, sharp interfaces are achieved. It is found that the low shell growth temperature leads to smoother side facets, while higher shell growth temperatures lead to more relaxed structures with significantly faceted sidewalls. The possibility of forming a III–V/IV heterostructure nanowire with a Ge section development in the axial direction of a GaAs nanowire using a Ga droplet is also revealed. These nanowires provide an ideal platform for nanoscale III–V/IV combination, which is promising for highly integrated photonic and electronic hybrid devices on a single chip. date: 2018-10-01 date_type: published publisher: AMER CHEMICAL SOC official_url: http://dx.doi.org/10.1021/acs.nanolett.8b02760 oa_status: green full_text_type: other language: eng primo: open primo_central: open_green article_type_text: Article verified: verified_manual elements_id: 1587692 doi: 10.1021/acs.nanolett.8b02760 lyricists_name: Boras, Georgios lyricists_name: Liu, Huiyun lyricists_name: Tang, Mingchu lyricists_name: Yu, Xuezhe lyricists_name: Zeng, Haotian lyricists_name: Zhang, Yunyan lyricists_id: GBORA20 lyricists_id: HLIUX22 lyricists_id: TANGX88 lyricists_id: XYUAX53 lyricists_id: HZENG01 lyricists_id: ZHANI48 actors_name: Dewerpe, Marie actors_id: MDDEW97 actors_role: owner full_text_status: public publication: Nano Letters volume: 18 number: 10 pagerange: 6397-6403 pages: 7 issn: 1530-6992 citation: Zeng, H; Yu, X; Fonseka, HA; Gott, JA; Tang, M; Zhang, Y; Boras, G; ... Liu, H; + view all <#> Zeng, H; Yu, X; Fonseka, HA; Gott, JA; Tang, M; Zhang, Y; Boras, G; Xu, J; Sanchez, AM; Liu, H; - view fewer <#> (2018) Hybrid III-V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores. Nano Letters , 18 (10) pp. 6397-6403. 10.1021/acs.nanolett.8b02760 <https://doi.org/10.1021/acs.nanolett.8b02760>. Green open access document_url: https://discovery.ucl.ac.uk/id/eprint/10059669/3/Liu_Revised%20with%20NO%20mark%20GaAs-Ge%20NL.pdf