TY  - JOUR
SP  - 6397
VL  - 18
N1  - This version is the author accepted manuscript. For information on re-use, please refer to the publisher?s terms and conditions.
IS  - 10
SN  - 1530-6992
UR  - http://dx.doi.org/10.1021/acs.nanolett.8b02760
JF  - Nano Letters
A1  - Zeng, H
A1  - Yu, X
A1  - Fonseka, HA
A1  - Gott, JA
A1  - Tang, M
A1  - Zhang, Y
A1  - Boras, G
A1  - Xu, J
A1  - Sanchez, AM
A1  - Liu, H
TI  - Hybrid III-V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores
EP  - 6403
AV  - public
Y1  - 2018/10/01/
ID  - discovery10059669
N2  - The integration of optically active III?V and electronic-suitable IV materials on the same nanowire could provide a great potential for the combination of photonics and electronics in the nanoscale. In this Letter, we demonstrate the growth of GaAs/Ge core?shell nanowires on Si substrates by molecular beam epitaxy and investigate the radial and axial Ge epitaxy on GaAs nanowires in detail. High-quality core?shell nanowires with smooth side facets and dislocation-free, sharp interfaces are achieved. It is found that the low shell growth temperature leads to smoother side facets, while higher shell growth temperatures lead to more relaxed structures with significantly faceted sidewalls. The possibility of forming a III?V/IV heterostructure nanowire with a Ge section development in the axial direction of a GaAs nanowire using a Ga droplet is also revealed. These nanowires provide an ideal platform for nanoscale III?V/IV combination, which is promising for highly integrated photonic and electronic hybrid devices on a single chip.
PB  - AMER CHEMICAL SOC
KW  - Science & Technology
KW  -  Physical Sciences
KW  -  Technology
KW  -  Chemistry
KW  -  Multidisciplinary
KW  -  Chemistry
KW  -  Physical
KW  -  Nanoscience & Nanotechnology
KW  -  Materials Science
KW  -  Multidisciplinary
KW  -  Physics
KW  -  Applied
KW  -  Physics
KW  -  Condensed Matter
KW  -  Chemistry
KW  -  Science & Technology - Other Topics
KW  -  Materials Science
KW  -  Physics
KW  -  Nanowires
KW  -  III-V/group IV
KW  -  hybrid heterostructure
KW  -  MBE
KW  -  single-crystalline
KW  -  FIELD-EFFECT TRANSISTORS
KW  -  LIGHT-EMITTING DIODE
KW  -  SILICON
KW  -  HETEROSTRUCTURES
KW  -  ELECTRONICS
KW  -  DETECTORS
KW  -  GERMANIUM
KW  -  GROWTH
KW  -  BAND
ER  -