%0 Journal Article
%@ 2327-9125
%A Liao, M
%A Chen, S
%A Liu, Z
%A Wang, Y
%A Ponnampalam, L
%A Zhou, Z
%A Wu, J
%A Tang, M
%A Shutts, S
%A Liu, Z
%A Smowton, P
%A Yu, S
%A Seeds, A
%A Liu, H
%D 2018
%F discovery:10057113
%I OSA Publishing
%J Photonics Research
%N 11
%P 1062-1066
%T Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon
%U https://discovery.ucl.ac.uk/id/eprint/10057113/
%V 6
%X We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon (Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot (FP) lasers have achieved a room-temperature continuous-wave (CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90°C. An ultra-low relative intensity noise of less than −150  dB/Hz is measured in the 4–16 GHz range. Using this low-noise Si-based laser, we then demonstrate 25.6 Gb/s data transmission over 13.5 km SMF-28. These low-cost FP laser devices are promising candidates to provide cost-effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links.
%Z Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License (http://creativecommons.org/licenses/by/4.0/). Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.