@article{discovery10057113,
           month = {November},
          number = {11},
       publisher = {OSA Publishing},
           title = {Low-noise 1.3 {\ensuremath{\mu}}m InAs/GaAs quantum dot laser monolithically grown on silicon},
            year = {2018},
         journal = {Photonics Research},
          volume = {6},
            note = {Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License (http://creativecommons.org/licenses/by/4.0/). Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.},
           pages = {1062--1066},
             url = {https://doi.org/10.1364/PRJ.6.001062},
            issn = {2327-9125},
          author = {Liao, M and Chen, S and Liu, Z and Wang, Y and Ponnampalam, L and Zhou, Z and Wu, J and Tang, M and Shutts, S and Liu, Z and Smowton, P and Yu, S and Seeds, A and Liu, H},
        abstract = {We report low-noise, high-performance single transverse mode 1.3 {\ensuremath{\mu}}m InAs/GaAs quantum dot lasers monolithically grown on silicon (Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry-Perot (FP) lasers have achieved a room-temperature continuous-wave (CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90oC. An ultra-low relative intensity noise of less than ?150  dB/Hz is measured in the 4-16 GHz range. Using this low-noise Si-based laser, we then demonstrate 25.6 Gb/s data transmission over 13.5 km SMF-28. These low-cost FP laser devices are promising candidates to provide cost-effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links.}
}