eprintid: 10051514
rev_number: 25
eprint_status: archive
userid: 608
dir: disk0/10/05/15/14
datestamp: 2018-07-03 10:34:14
lastmod: 2021-09-26 22:28:08
status_changed: 2018-07-03 10:34:14
type: article
metadata_visibility: show
creators_name: Mehonic, A
creators_name: Shluger, AL
creators_name: Gao, D
creators_name: Valov, I
creators_name: Miranda, E
creators_name: Ielmini, D
creators_name: Bricalli, A
creators_name: Ambrosi, E
creators_name: Li, C
creators_name: Yang, JJ
creators_name: Xia, Q
creators_name: Kenyon, AJ
title: Silicon Oxide (SiOx): A Promising Material for Resistance Switching?
ispublished: pub
divisions: UCL
divisions: B04
divisions: C05
divisions: F46
divisions: C06
divisions: F60
keywords: silicon oxide, ReRAM, memristor, resistance switching
note: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
abstract: Interest in resistance switching is currently growing apace. The promise of novel high‐density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but beyond that there are exciting future possibilities for applications in hardware acceleration for machine learning and artificial intelligence, and for neuromorphic computing. A very wide range of material systems exhibit resistance switching, a number of which—primarily transition metal oxides—are currently being investigated as complementary metal–oxide–semiconductor (CMOS)‐compatible technologies. Here, the case is made for silicon oxide, perhaps the most CMOS‐compatible dielectric, yet one that has had comparatively little attention as a resistance‐switching material. Herein, a taxonomy of switching mechanisms in silicon oxide is presented, and the current state of the art in modeling, understanding fundamental switching mechanisms, and exciting device applications is summarized. In conclusion, silicon oxide is an excellent choice for resistance‐switching technologies, offering a number of compelling advantages over competing material systems.
date: 2018-10-25
date_type: published
publisher: Wiley-VCH Verlag
official_url: https://doi.org/10.1002/adma.201801187
oa_status: green
full_text_type: other
language: eng
primo: open
primo_central: open_green
verified: verified_manual
elements_id: 1564452
doi: 10.1002/adma.201801187
lyricists_name: Kenyon, Anthony
lyricists_name: Mehonic, Adnan
lyricists_name: Shluger, Alexander
lyricists_id: AJKEN86
lyricists_id: AMEHO63
lyricists_id: ASHLU39
actors_name: Flynn, Bernadette
actors_id: BFFLY94
actors_role: owner
full_text_status: public
publication: Advanced Materials
volume: 30
number: 43
article_number: 1801187
issn: 0935-9648
citation:        Mehonic, A;    Shluger, AL;    Gao, D;    Valov, I;    Miranda, E;    Ielmini, D;    Bricalli, A;                     ... Kenyon, AJ; + view all <#>        Mehonic, A;  Shluger, AL;  Gao, D;  Valov, I;  Miranda, E;  Ielmini, D;  Bricalli, A;  Ambrosi, E;  Li, C;  Yang, JJ;  Xia, Q;  Kenyon, AJ;   - view fewer <#>    (2018)    Silicon Oxide (SiOx): A Promising Material for Resistance Switching?                   Advanced Materials , 30  (43)    , Article 1801187.  10.1002/adma.201801187 <https://doi.org/10.1002/adma.201801187>.       Green open access   
 
document_url: https://discovery.ucl.ac.uk/id/eprint/10051514/1/Kenyon_Silicon_Oxide_SiOx.pdf