TY  - JOUR
JF  - Frontiers in Neuroscience
KW  - Resistive switching
KW  -  resistance switching
KW  -  STDP
KW  -  RRAM
KW  -  machine learning
KW  -  neuromorphic systems
A1  - Zarudnyi, K
A1  - Mehonic, A
A1  - Montesi, L
A1  - Buckwell, M
A1  - Hudziak, S
A1  - Kenyon, AJ
ID  - discovery10042981
N2  - Resistance switching, or Resistive RAM (RRAM) devices show considerable potential for application in hardware spiking neural networks (neuro-inspired computing) by mimicking some of the behavior of biological synapses, and hence enabling non-von Neumann computer architectures. Spike-timing dependent plasticity (STDP) is one such behavior, and one example of several classes of plasticity that are being examined with the aim of finding suitable algorithms for application in many computing tasks such as coincidence detection, classification and image recognition. In previous work we have demonstrated that the neuromorphic capabilities of silicon-rich silicon oxide (SiOx) resistance switching devices extend beyond plasticity to include thresholding, spiking, and integration. We previously demonstrated such behaviors in devices operated in the unipolar mode, opening up the question of whether we could add plasticity to the list of features exhibited by our devices. Here we demonstrate clear STDP in unipolar devices. Significantly, we show that the response of our devices is broadly similar to that of biological synapses. This work further reinforces the potential of simple two-terminal RRAM devices to mimic neuronal functionality in hardware spiking neural networks.
SN  - 1662-4548
UR  - http://dx.doi.org/10.3389/fnins.2018.00057
PB  - Frontiers Media
N1  - © 2018 Zarudnyi, Mehonic, Montesi, Buckwell, Hudziak and Kenyon.
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TI  - Spike-Timing Dependent Plasticity in Unipolar Silicon Oxide RRAM Devices
AV  - public
Y1  - 2018/02/08/
VL  - 12
ER  -