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Number of items: 20.

B

BOYD, IW; (1988) NON-BULK SI-O BONDING AT THE SI-SIO2 INTERFACE. ELECTRONICS LETTERS , 24 (17) pp. 1062-1063. 10.1049/el:19880720.

BOYD, IW; (1988) PHOTOFORMATION OF DIELECTRICS. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , 46 (4) p. 241.

BOYD, IW; NOLAN, AJ; NAYAR, V; MICHELI, F; OVERBURY, A; DAVIDSON, A; SWANSON, G; (1988) LASER REPAIR OF FAULTY PACKAGED VLSI CHIPS. ELECTRONICS LETTERS , 24 (24) pp. 1474-1475. 10.1049/el:19881006.

G

GREENLAND, PT; (1988) RADIOACTIVITY - SEEKING NON-EXPONENTIAL DECAY. NATURE , 335 (6188) 298 - 298.

GREENLAND, PT; (1988) RESONANT IONIZATION POLARIZATION SPECTROSCOPY OF COMPLEX ATOMS. J PHYS B-AT MOL OPT , 21 (24) 4117 - 4129.

GREENLAND, PT; (1988) THE SEARCH FOR AN ATOMIC CAUSE OF ANOMALOUS DIFFUSION IN FUSION PLASMAS. J PHYS B-AT MOL OPT , 21 (3) L67 - L71.

GREENLAND, PT; HARRISON, MFA; (1988) EXCITED IMPURITY SPECIES AND PLASMA TRANSPORT. J PHYS B-AT MOL OPT , 21 (23) 4035 - 4048.

H

Hampton, RN; Saunders, GA; Stoneham, AM; Harding, JH; (1988) The electrical impedance of single-crystal urania at elevated temperatures. Journal of Nuclear Materials , 154 (2-3) 245 - 252. 10.1016/0022-3115(88)90360-1. Green open access
file

L

LUCAS, CA; MCMORROW, DF; BATES, S; (1988) STRUCTURAL CHARACTERIZATION OF STRAINED LAYER QUANTUM WELL SYSTEMS BY GRAZING-INCIDENCE X-RAY-SCATTERING. J ELECTROCHEM SOC , 135 (8) C380 - C380.

M

MICHELI, F; BOYD, IW; (1988) INSITU MONITORING OF LASER-INDUCED SILICON OXIDATION. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , 47 (3) pp. 249-253. 10.1007/BF00615930.

O

OVERTOOM, F; BOYD, IW; (1988) DUAL-WAVELENGTH TEMPERATURE MEASUREMENT OF LASER-HEATED SILICON. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS , 21 (6) pp. 550-553. 10.1088/0022-3735/21/6/005.

S

SCHOBER, HR; STONEHAM, AM; (1988) DIFFUSION OF HYDROGEN IN NIOBIUM. PHYSICAL REVIEW LETTERS , 60 (22) pp. 2307-2310. 10.1103/PhysRevLett.60.2307.

STONEHAM, A; (1988) Theory of Ceramic Surfaces. In: Nowotny, J and Dufour, L-C, (eds.) Surface and near-surface chemistry of oxide materials. (1 - 22). Elsevier Science Ltd: Kidlington, UK.

STONEHAM, A; Sangster, MJL; (1988) The Meyer-Neldel Rule: Compensation in Arrhenius Expressions. (UKAEA Reports TP.1157 ). United Kingdom Atomic Energy Authority (UKAEA): Harwell, UK.

STONEHAM, A; Tasker, PW; (1988) Oxide Interfaces: Theory of Oxide-Oxide and Oxide-Metal Interfaces (Invited talk). In: Pask, JA and Evans, AG, (eds.) Ceramic microstructures '86 : role of interfaces. (pp. 155 - 165). Plenum Press: New York, US.

STONEHAM, AM; PAJOT, B; SCHOBER, HR; (1988) LOCAL DISTORTIONS AND VOLUME CHANGES IN SEMICONDUCTORS - DONORS IN SILICON. J PHYS C SOLID STATE , 21 (26) 4687 - 4692. 10.1088/0022-3719/21/26/016. Green open access
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STONEHAM, AM; TASKER, PW; (1988) UNDERSTANDING OXIDE-METAL INTERFACES. JOURNAL DE PHYSIQUE , 49 (C-5) pp. 99-113. 10.1051/jphyscol:1988508.

STONEHAM, AM; TORRES, VTB; MASRI, PM; SCHOBER, HR; (1988) INTERATOMIC POTENTIALS IN SEMICONDUCTORS AND THEIR VALIDITY FOR DEFECT CALCULATIONS. PHILOS MAG A , 58 (1) pp. 93-106.

Silk, MG; Temple, JAG; STONEHAM, A; (1988) Can non-destructive testing be reliable? Atom , 377 4 - 8.

T

TASKER, PW; STONEHAM, AM; (1988) MODELING OF OXIDE METAL INTERFACE. MATERIALS SCIENCE AND TECHNOLOGY , 4 (5) pp. 382-383.

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