Chiatti, O; Warburton, PA; (2010) Low-temperature transport in ultra-thin tungsten films grown by focused-ion-beam deposition. Presented at: Condensed Matter and Materials Physics (CMMP) 2010, Warwick University, UK.

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Abstract

We have fabricated tungsten-containing films by focused-ion-beam (FIB)-induced chemical vapour deposition. By using ion-beam doses below 50 pC/µm² on a substrate of amorphous silicon, we have grown continuous films with thickness below 20 nm. The low-temperature electron transport properties were investigated by measuring current-voltage characteristics for temperatures down to 400 mK and in magnetic fields up to 3 T. FIB-deposited tungsten films are known to have an enhanced transition temperature compared to bulk tungsten, and films with thickness down to 50 nm have been investigated previously. The films in this work are closer to the limit of two-dimensional system and are superconducting below 1 K. Magnetoresistance measurements yield upper critical fields of the order of 1 T, and the resulting coherence length is smaller than the film thickness.

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