Isakov, I; Sourribes, MJL; Warburton, PA; (2017) Current-mode deep level transient spectroscopy of a semiconductor nanowire field-effect transistor. Journal of Applied Physics , 122 (9) , Article 094305. 10.1063/1.5000370.

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Abstract

One of the main limiting factors in the carrier mobility in semiconductor nanowires is the presence of deep trap levels. While deep-level transient spectroscopy (DLTS) has proved to be a powerful tool in analysing traps in bulk semiconductors, this technique is ineffective for the characterisation of nanowires due to their very small capacitance. Here, we introduce a new technique for measuring the spectrum of deep traps in nanowires. In current-mode DLTS (“I-DLTS”), the temperature-dependence of the transient current through a nanowire field-effect transistor in response to an applied gate voltage pulse is measured. We demonstrate the applicability of I-DLTS to determine the activation energy and capture cross-sections of several deep defect states in zinc oxide nanowires. In addition to characterising deep defect states, we show that I-DLTS can be used to measure the surface barrier height in semiconductor nanowires.

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