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THz intersubband dynamics in p-Si/SiGe quantum well structures

Pidgeon, CR and Murzyn, P and Wells, JPR and Bradley, L and Ikonic, Z and Kelsall, RW and Harrison, P and Lynch, SA and Paul, DJ and Arnone, DD and Robbins, DJ and Norris, D and Cullis, AG (2002) THz intersubband dynamics in p-Si/SiGe quantum well structures. In: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. (pp. 904 - 907). ELSEVIER SCIENCE BV

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Abstract

We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si SiGe multi-quantum Well structures in the FIR regime, homega < homega(LO), utilizing the Dutch free electron laser, FELIX, The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and show excellent agreement with our degenerate pump-probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement we determine a decay time of similar to10 ps This is found to be approximately constant in the temperature range from Delta to 100 K, in good agreement with the predictions of alloy scattering in the wells. (C) 2002 Elsevier Science B.V. All rights reserved.

Type:Proceedings paper
Title:THz intersubband dynamics in p-Si/SiGe quantum well structures
Event:10th International Conference on Modulated Semiconductor Structures
Location:LINZ, AUSTRIA
Dates:2001-07-23 - 2001-07-27
Keywords:SiGe, intersubband absorption, alloy scattering, HOLE
UCL classification:UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology

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