Wang, K; Vygranenko, Y; Nathan, A; (2007) Optically transparent ZnO-based n-i-p ultraviolet photodetectors. THIN SOLID FILMS , 515 (17) 6981 - 6985. 10.1016/j.tsf.2007.02.009.
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An optically transparent tin-doped indium oxide/ZnO/NiO n-i-p heterostructure photodiode was fabricated by ion beam assisted e-beam evaporation. The diode clearly demonstrates rectifying current-voltage Q-V) characteristics with a current rectification ratio up to 10(4) at bias +/- 2 Vand a low reverse current of similar to 100 nA/cm(2) at - 5V. Analysis of J-V characteristics including time dependence of the dark current shows that the leakage current at low biases is attributed to thermal generation via defect states, and at high biases, field-enhanced carrier generation from the ZnO layer dominates. Spectral response and linearity measurements indicate that such a diode is particularly suitable for low level of ultraviolet detection. (C) 2007 Elsevier B.V. All rights reserved.
|Title:||Optically transparent ZnO-based n-i-p ultraviolet photodetectors|
|Keywords:||zinc oxide, ion beam assisted e-beam evaporation, transparent UV photodetector, n-i-p heterostructure photodiode, BEAM ASSISTED DEPOSITION, OXIDE SEMICONDUCTORS, THIN-FILMS, FABRICATION, PHOTORESPONSE, PHOTODIODES, TRANSISTORS, NIO|
|UCL classification:||UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering|
UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
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