So, WY and Wikberg, JM and Lang, DV and Mitrofanov, O and Kloc, CL and Siegrist, T and Sergent, AM and Ramirez, AP (2007) Mobility-independent doping in crystalline rubrene field-effect transistors. SOLID STATE COMMUN , 142 (9) 483 - 486. 10.1016/j.ssc.2007.03.040.
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We report doping effects in an organic semiconductor, crystalline rubrene. Oxygen-related states are introduced (removed) by annealing in oxygen (vacuum), at an elevated temperature. Room temperature stability is found in the resulting effects: (1) about two orders of magnitude increase in carrier density at equilibrium, (2) significant modification of threshold voltages, and (3) an unchanged field-effect mobility in the on-current state. Density of states data are modeled as tunneling from the valence band in the channel region into deep-level acceptors in the adjacent region. These oxygen acceptors are the likely dopant species. (c) 2007 Elsevier Ltd. All rights reserved.
|Title:||Mobility-independent doping in crystalline rubrene field-effect transistors|
|Keywords:||organic crystals, semiconductors, impurities in semiconductors, electronic states (localized), THIN-FILM TRANSISTORS, PENTACENE, CHANNEL|
|UCL classification:||UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering|
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