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Formation of an Au-Si eutectic on a clean silicon surface

Pinardi, AL; Leake, SJ; Felici, R; Robinson, IK; (2009) Formation of an Au-Si eutectic on a clean silicon surface. PHYS REV B , 79 (4) , Article 045416. 10.1103/PhysRevB.79.045416.

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Abstract

We investigated the formation of an AuSi eutectic from a silicon (100) surface cleaned under ultrahigh vacuum conditions and an evaporated 3-nm-thick gold layer using a suite of surface-sensitive x-ray techniques and Auger spectroscopy. The signature of the presence of the eutectic liquid came from its recently discovered surface-ordered state, whose diffraction pattern is confirmed. As expected, the eutectic started to form at its melting temperature (380 degrees C), but a small change in the film thickness was detected beforehand. The surface-ordered state was found to disappear at T=473 degrees C without the appearance of a second phase, but also to persist after resolidification of the liquid. Subsequent electron and x-ray microscopy after the sample was removed from vacuum showed the presence of phase-separated gold in the form of micronsized crystals on the surface.

Type: Article
Title: Formation of an Au-Si eutectic on a clean silicon surface
DOI: 10.1103/PhysRevB.79.045416
Keywords: Auger electron spectra, elemental semiconductors, eutectic alloys, gold alloys, liquid alloys, liquid films, melting point, metallic thin films, silicon, silicon alloys, solidification, surface structure, X-ray microscopy, GROWTH, ALLOY
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/78688
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