UCL logo

UCL Discovery

UCL home » Library Services » Electronic resources » UCL Discovery

Atmospheric Pressure Chemical Vapour Deposition of TiCl4 and tBuAsH(2) to Form Titanium Arsenide Thin Films

Thomas, T; Blackman, CS; Parkin, IP; Carmalt, CJ; (2010) Atmospheric Pressure Chemical Vapour Deposition of TiCl4 and tBuAsH(2) to Form Titanium Arsenide Thin Films. EUR J INORG CHEM (36) 5629 - 5634. 10.1002/ejic.201000839.

Full text not available from this repository.

Abstract

Titanium arsenide thin films were deposited by the atmospheric-pressure chemical vapour deposition (APCVD) of TiCl4 and tBuAsH(2) at substrate temperatures between 450 and 550 degrees C. The deposited films are typically silver in appearance, demonstrate good adherence and were identified by X-ray powder diffraction as crystalline TiAs. X-ray photoelectron spectroscopy (XPS) and Raman microscopy support the formation of TiAs. The TiAs films have an approximate 1:1 ratio of Ti:As, as identified by wavelength dispersive analysis of X-rays (WDX), and the films grow by an island growth mechanism with deposition rates of ca. 0.1 mu m min(-1). The films display borderline metallic/semiconductor conductivity and those deposited at 550 degrees C possess high hardness.

Type:Article
Title:Atmospheric Pressure Chemical Vapour Deposition of TiCl4 and tBuAsH(2) to Form Titanium Arsenide Thin Films
DOI:10.1002/ejic.201000839
Keywords:Titanium, Arsenic, Thin films, Chemical vapour deposition, TRANSITION-METAL PHOSPHIDES, IMIDO COMPLEXES, NITRIDE, CVD, CYCLOHEXYLPHOSPHINE, PRECURSORS, COATINGS, TIN, TETRACHLORIDE, ZIRCONIUM
UCL classification:UCL > School of BEAMS > Faculty of Maths and Physical Sciences > Chemistry

Archive Staff Only: edit this record