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HIGH-TEMPERATURE STABILITY OF CHEMICALLY VAPOR-DEPOSITED DIAMOND DIODES

MCKEAG, RD; CHAN, SSM; JOHNSON, C; CHALKER, PR; JACKMAN, RB; (1995) HIGH-TEMPERATURE STABILITY OF CHEMICALLY VAPOR-DEPOSITED DIAMOND DIODES. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , 29 (1-3) pp. 223-227. 10.1016/0921-5107(94)04046-7.

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Type: Article
Title: HIGH-TEMPERATURE STABILITY OF CHEMICALLY VAPOR-DEPOSITED DIAMOND DIODES
Location: STRASBOURG, FRANCE
DOI: 10.1016/0921-5107(94)04046-7
Keywords: Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Condensed Matter, Materials Science, Physics, DIAMOND, DIODES, HIGH TEMPERATURE, SCHOTTKY, SEMICONDUCTING DIAMOND, OHMIC CONTACTS, SCHOTTKY DIODES, BARRIER HEIGHT, FILMS
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/734854
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