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Thin film diamond photodiode for ultraviolet light detection

Whitfield, MD; Chan, SS; Jackman, RB; (1995) Thin film diamond photodiode for ultraviolet light detection. Applied Physics Letters 290-.

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Abstract

A photodiode has been constructed from lightly boron doped, Si supported, thin film chemically vapor deposited (CVD) diamond which shows over five orders of magnitude discrimination between deep UV (<220 nm) and visible light. A thin (10 nm) gold Schottky barrier with an associated Ti-Ag-Au ohmic contact was used to create a rectifying device with low (<2 pA) dark currents when reversed biased. This structure showed a sharp cut off in photoresponse at 220 nm, the band gap energy of diamond. Conversely, a photoconductive device fabricated from similar (nominally undoped) material gave a broader UV photoresponse and displayed high dark currents; the superior performance of the diode structure on fine grain material is discussed. © 1996 American Institute of Physics.

Type: Article
Title: Thin film diamond photodiode for ultraviolet light detection
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/734845
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