Ahmad, RK and Parada, AC and Tumilty, N and Jackman, RB (2010) Nanodiamond-gated diamond field-effect transistor for chemical sensing using hydrogen-induced transfer doping for channel formation. APPL PHYS LETT , 97 (20) , Article 203503. 10.1063/1.3518060.
Full text not available from this repository.
Abstract
A method for attaching nanodiamonds (NDs) to H-terminated diamond devices displaying surface conductivity, configured as an ion-sensitive field-effect transistor and resistor sensor, is demonstrated. From Hall effect measurements, there was minimal sign of degradation of the p-type surface conductivity after ND coating (similar to 10(13) carriers/cm(2), similar to 27 cm(2)/V s). In response to pH changes, the device showed an improved response to the as-hydrogenated sensor, from 19 mV/pH to a maximum of 37 mV/pH. Configured in resistor mode, exposure to 2,4-dinitrotoluene vapor gave rise to sensitive detection, while the uncoated H-terminated device exhibited reaction instability. The mechanisms behind these observations are discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3518060]
| Type: | Article |
|---|---|
| Title: | Nanodiamond-gated diamond field-effect transistor for chemical sensing using hydrogen-induced transfer doping for channel formation |
| DOI: | 10.1063/1.3518060 |
| Keywords: | POLYCRYSTALLINE DIAMOND, NANOCRYSTALLINE DIAMOND, SURFACE CONDUCTIVITY, PERFORMANCE, FABRICATION, SENSORS, LENGTH, FETS |
| UCL classification: | UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering |
Archive Staff Only: edit this record